IRF5210 - P-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IRF5210
Manufacturer	INCHANGE
File Size	274.86 KB
Description	P-Channel MOSFET
Datasheet	IRF5210-INCHANGE.pdf

IRF5210 Product details

Description

Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max.Operating Junction Temperature 175 Tstg Storage Temperature -

Features

Static drain-source on-resistance: RDS(on)≤0.06Ω.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 12, 2020 |