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IRF3315S N-Channel MOSFET

IRF3315S Description

Isc N-Channel MOSFET Transistor IRF3315S *.

IRF3315S Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF3315S Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 21 15 84 PD Total Dissipation @TC=25℃ 94 Tch Max. Operating Jun

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Datasheet Details

Part number
IRF3315S
Manufacturer
INCHANGE
File Size
253.87 KB
Datasheet
IRF3315S-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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