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IPU80R1K4CE - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPU80R1K4CE
Manufacturer	INCHANGE
File Size	260.61 KB
Description	N-Channel MOSFET
Datasheet	IPU80R1K4CE-INCHANGE.pdf

IPU80R1K4CE Product details

Features

Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A).
Advanced trench process technology.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 29, 2020 |