IPP65R660CFD - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPP65R660CFD
Manufacturer	INCHANGE
File Size	240.78 KB
Description	N-Channel MOSFET
Datasheet	IPP65R660CFD-INCHANGE.pdf

IPP65R660CFD Product details

Description

Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 62.5 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER

Features

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Static drain-source on-resistance: RDS(on) ≤0.66Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |