IPP35CN10N N-Channel MOSFET

INCHANGE

IPP35CN10N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP35CN10N，IIPP35CN10N *.

IPP35CN10N Features

* Static drain-source on-resistance: RDS(on) ≤0.035Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP35CN10N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 27 IDM Drain Current-Single Pulsed 108 PD Total Dissipation @TC=25℃ 58 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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IPP35CN10N Datasheet Preview — Preview of IPP35CN10N PDF

Datasheet Details

Part number: IPP35CN10N
Manufacturer: INCHANGE
File Size: 241.85 KB
Datasheet: IPP35CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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