IPP065N03L N-Channel MOSFET

INCHANGE

IPP065N03L Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP065N03L，IIPP065N03L *.

IPP065N03L Features

* Static drain-source on-resistance: RDS(on) ≤6.5mΩ
* Enhancement mode:
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP065N03L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 56 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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IPP065N03L Datasheet Preview — Preview of IPP065N03L PDF

Datasheet Details

Part number: IPP065N03L
Manufacturer: INCHANGE
File Size: 240.92 KB
Datasheet: IPP065N03L-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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