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IPP030N10N5 N-Channel MOSFET

IPP030N10N5 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N5，IIPP030N10N5 *.

IPP030N10N5 Features

* Static drain-source on-resistance: RDS(on) ≤3.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP030N10N5 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage

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Datasheet Details

Part number
IPP030N10N5
Manufacturer
INCHANGE
File Size
241.47 KB
Datasheet
IPP030N10N5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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