IPB60R600C6 N-Channel MOSFET

INCHANGE

IPB60R600C6 Description

Isc N-Channel MOSFET Transistor IPB60R600C6 *.

IPB60R600C6 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB60R600C6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 7.3 4.6 19 PD Total Dissipation @TC=25℃ 63 Tch Max. Operating J

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IPB60R600C6 Datasheet Preview — Preview of IPB60R600C6 PDF

Datasheet Details

Part number: IPB60R600C6
Manufacturer: INCHANGE
File Size: 253.59 KB
Datasheet: IPB60R600C6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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