IPB60R360P7 N-Channel MOSFET

INCHANGE

IPB60R360P7 Description

Isc N-Channel MOSFET Transistor IPB60R360P7 *.

IPB60R360P7 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB60R360P7 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 9 6 26 PD Total Dissipation @TC=25℃ 41 Tch Max. Operating Junct

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IPB60R360P7 Datasheet Preview — Preview of IPB60R360P7 PDF

Datasheet Details

Part number: IPB60R360P7
Manufacturer: INCHANGE
File Size: 253.99 KB
Datasheet: IPB60R360P7-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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