IPB60R280P6 N-Channel MOSFET

INCHANGE

IPB60R280P6 Description

isc N-Channel MOSFET Transistor *.

IPB60R280P6 Features

* With TO-263(D2PAK) packaging
* Ultra-fast body diode
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

IPB60R280P6 Applications

* Switching applications INCHANGE Semiconductor IPB60R280P6
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 13.8 8.8 39 PD Total Dissipat

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IPB60R280P6 Datasheet Preview — Preview of IPB60R280P6 PDF

Datasheet Details

Part number: IPB60R280P6
Manufacturer: INCHANGE
File Size: 200.83 KB
Datasheet: IPB60R280P6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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