IPB60R190P6 N-Channel MOSFET

INCHANGE

IPB60R190P6 Description

Isc N-Channel MOSFET Transistor IPB60R190P6 *.

IPB60R190P6 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB60R190P6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 20.2 12.7 57 PD Total Dissipation @TC=25℃ 151 Tch Max. Operatin

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Datasheet Details

Part number: IPB60R190P6
Manufacturer: INCHANGE
File Size: 254.33 KB
Datasheet: IPB60R190P6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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