IPB600N25N3G N-Channel MOSFET

INCHANGE

IPB600N25N3G Description

Isc N-Channel MOSFET Transistor IPB600N25N3G *.

IPB600N25N3G Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB600N25N3G Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 25 18 100 PD Total Dissipation @TC=25℃ 136 Tch Max. Operating J

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IPB600N25N3G Datasheet Preview — Preview of IPB600N25N3G PDF

Datasheet Details

Part number: IPB600N25N3G
Manufacturer: INCHANGE
File Size: 254.25 KB
Datasheet: IPB600N25N3G-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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