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IPB407N30N N-Channel MOSFET

IPB407N30N Description

Isc N-Channel MOSFET Transistor IPB407N30N *.

IPB407N30N Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB407N30N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 44 34 176 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating J

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Datasheet Details

Part number
IPB407N30N
Manufacturer
INCHANGE
File Size
254.01 KB
Datasheet
IPB407N30N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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