IPA80R1K4CE N-Channel MOSFET

INCHANGE

IPA80R1K4CE Description

Isc N-Channel MOSFET Transistor *.

IPA80R1K4CE Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA80R1K4CE Applications

* Switching applications INCHANGE Semiconductor IPA80R1K4CE
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 3.9 2.3 12 P

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IPA80R1K4CE Datasheet Preview — Preview of IPA80R1K4CE PDF

Datasheet Details

Part number: IPA80R1K4CE
Manufacturer: INCHANGE
File Size: 197.31 KB
Datasheet: IPA80R1K4CE-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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