IPA65R600C6 N-Channel MOSFET

INCHANGE

IPA65R600C6 Description

Isc N-Channel MOSFET Transistor *.

IPA65R600C6 Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA65R600C6 Applications

* Switching applications INCHANGE Semiconductor IPA65R600C6
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 7.3 4.6 18 P

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IPA65R600C6 Datasheet Preview — Preview of IPA65R600C6 PDF

Datasheet Details

Part number: IPA65R600C6
Manufacturer: INCHANGE
File Size: 197.03 KB
Datasheet: IPA65R600C6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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