IPA65R280E6 N-Channel MOSFET

INCHANGE

IPA65R280E6 Description

Isc N-Channel MOSFET Transistor *.

IPA65R280E6 Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA65R280E6 Applications

* Switching applications INCHANGE Semiconductor IPA65R280E6
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 13.8 .8.7 39

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Datasheet Details

Part number: IPA65R280E6
Manufacturer: INCHANGE
File Size: 197.37 KB
Datasheet: IPA65R280E6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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