IPA60R1K0CE N-Channel MOSFET

INCHANGE

IPA60R1K0CE Description

Isc N-Channel MOSFET Transistor *.

IPA60R1K0CE Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA60R1K0CE Applications

* Switching applications INCHANGE Semiconductor IPA60R1K0CE
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 6.8 4.3 12 P

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IPA60R1K0CE Datasheet Preview — Preview of IPA60R1K0CE PDF

Datasheet Details

Part number: IPA60R1K0CE
Manufacturer: INCHANGE
File Size: 197.31 KB
Datasheet: IPA60R1K0CE-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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