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FW26025A1 - PNP Transistor

Description

High DC Current Gain- : hFE = 5000(Min)@ IC= -2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)

Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Designed for linear and switching industrial equipment ABSOLUTE MAXIM

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 5000(Min)@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -40 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
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