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FDA59N30 N-Channel MOSFET

FDA59N30 Description

Isc N-Channel MOSFET Transistor FDA59N30 *.

FDA59N30 Features

* With To-3P package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDA59N30 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 59 35 236 PD Total Dissipation @TC=25℃ 500 Tch Max. Operating J

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Datasheet Details

Part number
FDA59N30
Manufacturer
INCHANGE
File Size
259.52 KB
Datasheet
FDA59N30-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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