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FCPF250N65S3 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor FCPF250N65S3 *.

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Datasheet Specifications

Part number
FCPF250N65S3
Manufacturer
INCHANGE
File Size
232.01 KB
Datasheet
FCPF250N65S3-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 31 Tj Max. Operating Juncti

FCPF250N65S3 Distributors

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