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FCP650N80Z N-Channel MOSFET

FCP650N80Z Description

isc N-Channel MOSFET Transistor *.

FCP650N80Z Features

* Static drain-source on-resistance: RDS(on) ≤650mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and gene

FCP650N80Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 162 Tj Operating Junction Temperature -55~150 Tstg Storage Tem

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Datasheet Details

Part number
FCP650N80Z
Manufacturer
INCHANGE
File Size
277.44 KB
Datasheet
FCP650N80Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCP650N80Z-like datasheet