FCH170N60 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor FCH170N60 *.

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Datasheet Specifications

Part number: FCH170N60
Manufacturer: INCHANGE
File Size: 356.15 KB
Datasheet: FCH170N60-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-247 packaging
* Drain Source Voltage- : VDSS ≥ 600V
* Static drain-source on-resistance: RDS(on) ≤ 170mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 22 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation 22

FCH170N60 Distributors

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FCH170N60 N-Channel MOSFET INCHANGE

INCHANGE FCH170N60-like datasheet