D858 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD858 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Good Linearity of hFE. High Collector Power Dissipation APPLICATIONS. Des.

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Datasheet Specifications

Part number: D858
Manufacturer: INCHANGE
File Size: 127.78 KB
Datasheet: D858-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 60 V 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak PC Collect

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D858 Silicon NPN Power Transistor INCHANGE

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