D689 Silicon NPN Darlington Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor .
High DC Current Gain: hFE = 1000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min). Low Collector-Emitter Saturat.

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Datasheet Specifications

Part number: D689
Manufacturer: INCHANGE
File Size: 130.94 KB
Datasheet: D689-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Low frequency medium power amplifier and medium speed switching applications.
* Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage 100 V Collector-Emitter Volta

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