D357 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. Complement to Type 2SB527 APPLICATIONS. Designed.

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Datasheet Specifications

Part number: D357
Manufacturer: INCHANGE
File Size: 134.97 KB
Datasheet: D357-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC

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D357 Silicon NPN Power Transistor INCHANGE

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