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C4129 Silicon NPN Power Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4129 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation APPLICATIONS. Designed.

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Datasheet Specifications

Part number
C4129
Manufacturer
INCHANGE
File Size
184.61 KB
Datasheet
C4129-INCHANGE.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A ICM Collector C

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