C3306 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: C3306
Manufacturer: INCHANGE
File Size: 210.29 KB
Datasheet: C3306-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Coll

C3306 Distributors

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C3306 Silicon NPN Power Transistor INCHANGE

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