C2929 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 .
High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min). High Switching Speed. High Reliability APPLICATIONS. Switching regulat.

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Datasheet Specifications

Part number: C2929
Manufacturer: INCHANGE
File Size: 111.08 KB
Datasheet: C2929_INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage

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C2929 Silicon NPN Power Transistor INCHANGE

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