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C0718 NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number
C0718
Manufacturer
INCHANGE
File Size
207.72 KB
Datasheet
C0718-INCHANGE.pdf
Description
NPN Transistor

Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 20 A IB Base Current-Continuous

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