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BU407H NPN Transistor

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Description

isc Silicon NPN Power Transistor BU407H .
High Voltage: VCEV= 330V(Min). Fast Switching Speed- : tf= 750ns(Max). Low Saturation Voltage- : VCE(sat)= 1. Minimum.

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Datasheet Specifications

Part number
BU407H
Manufacturer
INCHANGE
File Size
208.08 KB
Datasheet
BU407H-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V

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