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BDT63BF - NPN Transistor

Download the BDT63BF datasheet PDF. This datasheet also covers the BDT63F variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 10A Complement to Type BDT62F/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier application

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Note: The manufacturer provides a single datasheet file (BDT63F-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 VCER Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 BDT63F 60 VCEO Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector
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