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BD743C - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector Power Dissipation- : PC= 90W@ IC= 25℃ 15A Continuous Collector Current Complement to Type BD744C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe

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isc Silicon NPN Power Transistor BD743C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD744C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
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