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BD367 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Excellent Safe Operating Area Complement to Type BD366 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, serie

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isc Silicon PNP Power Transistors INCHANGE Semiconductor BD367 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Excellent Safe Operating Area ·Complement to Type BD366 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A IB Base Current-Continuous -5.
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