Datasheet4U Logo Datasheet4U.com

BD316 - PNP Transistor

Description

Excellent Safe Operating Area DC Current Gain-hFE= 25(Min.)@IC = -8A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -8A Complement to Type BD315 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD311 SILICON POWER TRANSISTOR SavantIC
BD312 SILICON POWER TRANSISTOR SavantIC
BD3150N50100AHF Ultra Low Profile 0404 Balun Anaren
BD317 SILICON POWER TRANSISTOR SavantIC
BD318 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
BD311 NPN Transistor
BD312 PNP Transistor
BD313 NPN Transistor
BD314 Silicon PNP Power Transistor
BD315 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor BD316 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -8A ·Complement to Type BD315 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load.
Published: |