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BD175 - NPN Transistor

Description

DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 45V(Min) Complement to type BD176 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switchin

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isc Silicon NPN Power Transistor BD175 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 45V(Min) ·Complement to type BD176 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
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