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B989 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Collector Power Dissipation- : PC= 30W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) Complement to Type 2SD1352 APPLICATIONS

Designed for general purpose applications.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB989 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD1352 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.4 A 30 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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