B679 Silicon PNP Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Complement to Type 2SC1079.

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Datasheet Specifications

Part number: B679
Manufacturer: INCHANGE
File Size: 55.01 KB
Datasheet: B679-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous Collector Power Dissip

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B679 Silicon PNP Power Transistor INCHANGE

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