Datasheet4U Logo Datasheet4U.com

APT6015B2VFR - N-Channel MOSFET

📥 Download Datasheet

Preview of APT6015B2VFR PDF
datasheet Preview Page 2

Datasheet Details

Part number APT6015B2VFR
Manufacturer INCHANGE
File Size 371.35 KB
Description N-Channel MOSFET
Datasheet download datasheet APT6015B2VFR-INCHANGE.pdf

APT6015B2VFR Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pluse 152 A PD Total Dissipation @TC=25℃ 520 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

📁 APT6015B2VFR Similar Datasheet

  • APT6015B2VR - Power MOSFET (Advanced Power Technology)
  • APT6015JN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
  • APT6015JVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT6015LVFR - Power MOSFET (Advanced Power Technology)
  • APT6015LVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
  • APT6010B2FLL - Power MOSFET (Microsemi)
  • APT6010B2LL - Power MOSFET (Advanced Power Technology)
  • APT6010JFLL - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. (Advanced Power Technology)
Other Datasheets by INCHANGE
Published: |