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APT11N80BC3G N-Channel MOSFET

APT11N80BC3G Description

isc N-Channel MOSFET Transistor APT11N80BC3G .
Designed for use in switch mode power supplies and general purpose applications.

APT11N80BC3G Features

* Drain Current
* ID=11A@ TC=25℃
* Drain Source Voltage- : VDSS=800V(Min)
* Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max)
* 100% avalanche tested

APT11N80BC3G Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max. Operating Junction Tempera

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Datasheet Details

Part number
APT11N80BC3G
Manufacturer
INCHANGE
File Size
371.87 KB
Datasheet
APT11N80BC3G-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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