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AOTF286L N-Channel MOSFET

AOTF286L Description

isc N-Channel MOSFET Transistor AOTF286L *.

AOTF286L Features

* Drain Current
* ID= 56A@ TC=25℃
* Drain Source Voltage- : VDSS= 80V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable f

AOTF286L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 225 A PD Total Dissipation @TC=25℃ 37.5 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOTF286L
Manufacturer
INCHANGE
File Size
232.30 KB
Datasheet
AOTF286L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOTF286L-like datasheet