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AOT418L N-Channel MOSFET

AOT418L Description

isc N-Channel MOSFET Transistor AOT418L *.

AOT418L Features

* Drain Current
* ID= 105A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

AOT418L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 105 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation @TC=25℃ 333 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOT418L
Manufacturer
INCHANGE
File Size
241.78 KB
Datasheet
AOT418L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOT418L-like datasheet