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AOB286L N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor AOB286L *.

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Datasheet Specifications

Part number
AOB286L
Manufacturer
INCHANGE
File Size
235.17 KB
Datasheet
AOB286L-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 70A@ TC=25℃
* Drain Source Voltage- : VDSS= 80V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable f

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pulsed 245 A PD Total Dissipation @TC=25℃ 167 W Tj Max. Operating Junction Temperature -

AOB286L Distributors

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