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AOB266L N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOB266L *.

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Datasheet Specifications

Part number
AOB266L
Manufacturer
INCHANGE
File Size
198.80 KB
Datasheet
AOB266L-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 140 110 450 PD Total Dissipation @TC=25℃ 268 Tch Max. Operating

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