8N90A N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.
Avalanche rugged technology. Rugged gate oxide technology. Lower input capacitance. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 8N90A
Manufacturer: INCHANGE
File Size: 213.46 KB
Datasheet: 8N90A-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* General purpose power amplifier
* ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃

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8N90A N-Channel MOSFET INCHANGE

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