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2SD882U-P - NPN Transistor

Description

High Collector Current-IC= 3.0A Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in medium power linear and switching appl

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse 7.0 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 1.
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