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2SD844 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A High Collector Power Dissipation : PC= 60W @TC=25℃ Complement to Type 2SB754 Minimum Lot-to-Lot variations for robust device performance and rel

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation : PC= 60W @TC=25℃ ·Complement to Type 2SB754 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 2.
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