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2SD715 - NPN Transistor

Description

High DC Current Gain : hFE= 2000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequen

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous 110 V 110 V 5 V 7 A ICM Collector Current-Peak PC ollector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Rang
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