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2SD582 - NPN Transistor

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Datasheet Details

Part number 2SD582
Manufacturer INCHANGE
File Size 203.04 KB
Description NPN Transistor
Datasheet download datasheet 2SD582-INCHANGE.pdf

2SD582 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A Complement to Type 2SB612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 80~100W audio amplifier power output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Ba

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