Datasheet4U Logo Datasheet4U.com

2SD570 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SD5703 - Power Transistor (Inchange Semiconductor)
  • 2SD571 - NPN Silicon Transistor (NEC)
  • 2SD575 - Triple Diffused Mesa Type Silicon Transistor (ETC)
  • 2SD5011 - Power Transistor (Inchange Semiconductor)
  • 2SD5041 - Transistors (USHA)
  • 2SD5070 - Power Transistor (Inchange Semiconductor)
  • 2SD5071 - Silicon NPN Power Transistors (SavantIC)
  • 2SD5071 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD5072 - NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR (Fairchild)
  • 2SD5072 - Silicon NPN Power Transistors (Savantic)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD570 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |