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2SD437 - NPN Transistor

Description

High Collector-Emitter Breakdown Voltage- : = V(BR)CEO 350V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching regulator app

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD437 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : = V(BR)CEO 350V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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